NDLI: Evaluation of Ag sintering die attach for high temperature power module applications

Content Provider	IEEE Xplore Digital Library
Author	Zhao, Yimin Wu, Yibo Evans, Kim Swingler, John Jones, Steve Dai, Xiaoping
Copyright Year	2014
Description	Author affiliation: Dynex Semiconductor Ltd, Doddington Road Lincoln LN6 3LF UK (Wu, Yibo; Dai, Xiaoping)
Abstract	Ag sintering technology has become a potential candidate to replace solder technology due to its well known high melting point (961°C), excellent electrical and thermal conductivity. In this paper, we report the evaluation of die attach using Ag sinter technology on substrates with different top metallizations (Au, Ag and Cu). Low pressure nano-Ag paste (Alpha Argomax) was chosen for this evaluation. Sintering is carried out in air using parameters suggested by the supplier. Bonding qualities and bonding mechanism were characterized by cross-section scanning electron microscopy, transmission electron microscopy and energy dispersive X-Ray spectroscopy. Bonding strength was evaluated by bend test and shear test. The experimental results indicated the bonding quality of Ag sinter to a Cu surface is not as good as bonding to Au and Ag surfaces. Oxidation of Cu is shown at the bond interface, leading to a poor bonding interface. However, Ag sintering to Cu surface without plating of the Au or Ag is of significant benefit to reduce cost. The benefit will be more important for the interconnection between substrate and baseplate due to the large bonding area. These results suggest Ag sintering to a Cu surface needs further development in terms of modifying the Ag paste composition to resist Cu oxidation or alternatively sinter in a N2 atmosphere. Temperature cycling tests indicate that sintered substrates exhibit better temperature cycling capabilities than soldered substrates for high temperature applications.
Starting Page	200
Ending Page	204
File Size	755688
Page Count	5
File Format	PDF
ISBN	9781479938605
DOI	10.1109/ISAF.2014.6917845
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-05-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Bonding Silicon Gold Microassembly Delamination Multichip modules power moudle interconnection die attach silver sinter
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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