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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhuo Wang Meng Wang Ming Qiao Bo Zhang |
| Copyright Year | 2009 |
| Description | Author affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China (Zhuo Wang; Meng Wang; Ming Qiao; Bo Zhang) |
| Abstract | A novel NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V half bridge gate drive IC with the NFFP HVI structure is experimentally realized by using a thin epitaxial high voltage BCD process. Compared with the conventional MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The experimental high side offset voltage of the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure. |
| Starting Page | 648 |
| Ending Page | 651 |
| File Size | 7733478 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424448869 |
| DOI | 10.1109/ICCCAS.2009.5250435 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-07-23 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrodes Breakdown voltage Low voltage Electric potential Costs Contacts Bridge circuits MOSFET circuits Avalanche breakdown Logic |
| Content Type | Text |
| Resource Type | Article |
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