NDLI: New Lateral IGBT with Controlled Anode on SOI substrate for PDP scan driver IC

Content Provider	IEEE Xplore Digital Library
Author	Wensuo Chen Gang Xie Bo Zhang Zehong Li Mei Zhao Zhaoji Li
Copyright Year	2009
Description	Author affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic science and Technology of China, Chengdu, China (Wensuo Chen; Gang Xie; Bo Zhang; Zehong Li; Mei Zhao; Zhaoji Li)
Abstract	A new Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure on SOI substrate, called Controlled Anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage drop, as compared to the conventional LIGBT. The breakdown voltage is above 200V. The proposed SOI CA-LIGBT can be fabricated by the conventional trench SOI power IC's process steps, and it is useful for PDP scan driver IC.
Starting Page	628
Ending Page	630
File Size	3625553
Page Count	3
File Format	PDF
ISBN	9781424448869
DOI	10.1109/ICCCAS.2009.5250427
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Fabrication Bipolar integrated circuits Laboratories Voltage Conductivity Numerical simulation Anodes Power integrated circuits Driver circuits
Content Type	Text
Resource Type	Article

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