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Content Provider | IEEE Xplore Digital Library |
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Author | Teymouri, M. Hadidi, K. Khoei, A. |
Copyright Year | 2009 |
Description | Author affiliation: Microelectronics Research Center Urmia University Urmia - Iran (Teymouri, M.; Hadidi, K.; Khoei, A.) |
Abstract | This paper presents a high linearity, low area and low power column-parallel readout circuit with a modified 3 transistor active pixel sensor (3T-APS). Each column readout circuit consumes 43uW power provided from the 3.3V power supply and a small layout size of $10x300um^{2}$ is integrated in the 512 columns at one side of the pixel array. The modified pixel achieves the signal saturation voltage is the same as the standard APS structure, and the readout circuit linearity range is 99.9%. A high linearity 512x512 pixel CMOS image sensor with the proposed column-parallel readout circuit is designed based on 0.35um 2P4M standard CMOS technology. |
Starting Page | 213 |
Ending Page | 216 |
File Size | 480651 |
Page Count | 4 |
File Format | |
ISBN | 9781424438969 |
DOI | 10.1109/ECCTD.2009.5274955 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-08-23 |
Publisher Place | Turkey |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Image quality Circuits Linearity Switches CMOS image sensors Dynamic range CMOS technology Threshold voltage Equations Pixel |
Content Type | Text |
Resource Type | Article |
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