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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yousuf, D. Shah, H.N.-u.-d. |
| Copyright Year | 2007 |
| Description | Author affiliation: Nat. Inst. of Technol. Srinagar, Srinagar (Yousuf, D.; Shah, H.N.-u.-d.) |
| Abstract | Silicon-an-insulator (SOI) is now becoming a mainstream technology because of the advantages offered by it over its bulk counterpart. However, the major design constraint related to MOS SOI technology is the floating body effect. Although extensively reported, there are still some consequences of floating body effect. One such outcome of floating body effect is the variable beta ratio. The variable beta ratio affects the switching behavior and hence the noise margins. In this paper we report the modeling of variable beta ratio, as a function of floating body effects Viz, kink and parasitic bipolar junction transistor (BJT). This model will be verified on a 2D device simulator. |
| Starting Page | 281 |
| Ending Page | 284 |
| File Size | 214701 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424417278 |
| DOI | 10.1109/IWPSD.2007.4472500 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-12-16 |
| Publisher Place | India |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Inverter Floating Body Effects Crosstalk Silicon on Insulator Technology Inverters β ratio Silicon on insulator technology Semiconductor device modeling Potential well MOSFET circuits Capacitance Impact ionization Threshold voltage Power engineering and energy |
| Content Type | Text |
| Resource Type | Article |
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