NDLI: Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD

Content Provider	IEEE Xplore Digital Library
Author	Yong Wang Naisen Yu Dongmei Deng Ming Li Fei Sun Kei May Lau
Copyright Year	2010
Description	Author affiliation: Photonics Technology Center, Department of, Electronic and Computer Engineering, Hong Kong, University of Science and Technology, Clear Water, Bay, Kowloon, Hong Kong, China (Dongmei Deng; Ming Li; Fei Sun; Kei May Lau) \|\| National Key Lab on High Power Semiconductor, Lasers, Changchun University of Science and, Technology, Changchun 130022, China (Yong Wang; Naisen Yu)
Abstract	AlGaN/GaN high electron mobility transistors (HEMTs) were grown on Si substrates by MOCVD. In the HEMT structure, the 1 µm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage current. Afterwards, an AlN spacer layer was inserted between the AlGaN barrier layer and the GaN channel layer to effectively reduce impurity scattering and improve the mobility and sheet carrier density of two-dimensional electron gas (2DEG). Devices of AlGaN/GaN HEMTs with 1 nm AlN spacer layer grown on undoped and partially Mg-doped GaN buffer layers were processed and characterized for comparison. For the DC characteristics, a low drain leakage current density of 55.8 nA/mm, a low gate leakage current density of 2.73 µA/mm, and a high off-state breakdown voltage of 104 V were achieved with device dimensions Lg/Wg/Lgs/Lgd = 1/10/1/1 µm, using the sample with partially Mg-doped GaN buffer layer. For the small signal RF characteristics, the device with partially Mg-doped has lower current gain cutoff frequency (fT) and lower power gain cutoff frequency (fmax) than that of the device without Mg-doped, indicating that doping Mg in GaN buffer layer should introduce the potential parasitic capacitance, which is not beneficial to RF performance of HEMT devices.
Starting Page	68
Ending Page	71
File Size	689374
Page Count	4
File Format	PDF
ISBN	9781424455119
e-ISBN	9781424455133
DOI	10.1109/RCSLPLT.2010.5615348
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-28
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Buffer layers AlGaN/GaN HEMT Si substrate HEMTs Silicon Mg-doped Gallium nitride MODFETs MOCVD Aluminum gallium nitride Substrates
Content Type	Text
Resource Type	Article

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