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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ghosh, A. |
| Copyright Year | 2007 |
| Abstract | Summary form only given. Ultra high-mobility GaAs/AlGaAs heterostructures are excellent systems for simulating elementary magnetic interactions with great control. The usual methods of generating magnetism in these semiconducting systems are two-fold: (1) defining quantum dot assemblies where each dot contains an odd number of electrons so that they play the role of ^/-electrons embedded in a metallic matrix, or (2) doping GaAs with magnetic atoms such as Mn. Here we propose a new route towards achieving a long-range magnetism in GaAs/AlGaAs heterostructures that does not require either formation of quantum dots or external doping of magnetic atoms. The idea is based on a two-component nature of background potential fluctuations in modulation-doped GaAs/AlGaAs systems which naturally trap localized spins at specific values of conduction electron density. The spins are placed roughly uniformly at ~ few hundred nanometers within the 2D electron gas, and manifest in unexpectedly complex behavior of transport and thermodynamic properties of the 2D system at mesoscopic length scales. A surface gate can modulate the mutual interaction between the spins, making the magnetic state tunable electrically. Although the present devices required the experiments to be carried out at sub-Kelvin temperature range, we suggest that such a model can be utilized in incorporating magnetism in low-dimensional semiconductors over a wide parameter range. |
| Starting Page | 325 |
| Ending Page | 325 |
| File Size | 29014 |
| Page Count | 1 |
| File Format | |
| ISBN | 9781424417278 |
| DOI | 10.1109/IWPSD.2007.4472509 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-12-16 |
| Publisher Place | India |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electron traps Thermodynamics Assembly systems Fluctuations Epitaxial layers Gallium arsenide Quantum dots Semiconductivity Magnetic semiconductors Semiconductor device doping |
| Content Type | Text |
| Resource Type | Article |
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