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Content Provider | IEEE Xplore Digital Library |
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Author | Mawby, P.A. Perez-Tomas, A. Jennings, M.R. Davis, M. Covington, J.A. Shah, V. Grasby, T. |
Copyright Year | 2007 |
Description | Author affiliation: Univ. of Warwick, Coventry (Mawby, P.A.) |
Abstract | The physical and electrical properties of silicon layers grown by molecular beam epitaxy (MBE) on commercial 4H-SiC substrates are reported. We investigate the effect of the Si doping type, Si doping concentration, Si temperature deposition and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si/SiC built-in potential and energy band offsets. In the last section, we propose that our n-n Si/SiC heterojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analysed. |
Starting Page | 775 |
Ending Page | 780 |
File Size | 484150 |
Page Count | 6 |
File Format | |
ISBN | 9781424417278 |
DOI | 10.1109/IWPSD.2007.4472633 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2007-12-16 |
Publisher Place | India |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Surface cleaning Scanning electron microscopy Temperature Molecular beam epitaxial growth Surface morphology heterojunction Doping Diodes Substrates MBE Silicon carbide silicon Heterojunctions diode |
Content Type | Text |
Resource Type | Article |
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