NDLI: Wavelet transform-based transient current analysis for detection of gate-oxide shorts in CMOS

Content Provider	IEEE Xplore Digital Library
Author	Ghandour, A. Fawaz, K. Chehab, A. Kayssi, A.
Copyright Year	2009
Description	Author affiliation: Department of Electrical and Computer Engineering, American University of Beirut, Beirut 1107 2020, Lebanon (Ghandour, A.; Fawaz, K.; Chehab, A.; Kayssi, A.)
Abstract	In this paper, we present a novel integrated method for testing gate-oxide shorts due to pinhole defects in the gate oxide of CMOS circuits using a wavelet transform-based transient current (iDDT) analysis technique. Wavelet transform has the property of resolving events in both time and frequency domains unlike Fourier transform which decomposes a signal in frequency components only. The proposed method is based on switching the CMOS gate, monitoring the wavelet transform of the transient current and comparing it to the one of the defect-free gate. The MOS transistor is modeled using a two-dimensional non-linear split model. Simulation results on the circuit under test show that wavelet transform has higher fault detection sensitivity than Fourier or peak-current value comparison methods and hence, can be considered very promising for defect oriented testing of gate-oxide shorts.
Starting Page	1
Ending Page	6
File Size	640314
Page Count	6
File Format	PDF
ISBN	9781424457489
e-ISBN	9781424457502
DOI	10.1109/IDT.2009.5404123
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-15
Publisher Place	Saudi Arabia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wavelet transforms Fourier transforms Wavelet domain gate-oxide shorts Wavelet analysis wavelet transformation Circuit testing Signal resolution Frequency domain analysis Semiconductor device modeling process variation iDDT Transient analysis Monitoring leakage
Content Type	Text
Resource Type	Article

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