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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jungwan Cho Zijian Li Bozorg-Grayeli, E. Kodama, T. Francis, D. Ejeckam, F. Faili, F. Asheghi, M. Goodson, K.E. |
| Copyright Year | 2012 |
| Description | Author affiliation: Department of Mechanical Engineering, Stanford University, CA, 94305, USA (Jungwan Cho; Zijian Li; Bozorg-Grayeli, E.; Kodama, T.; Asheghi, M.; Goodson, K.E.) || Group4 Labs, Inc., Fremont, CA, 94539, USA (Francis, D.; Ejeckam, F.; Faili, F.) |
| Abstract | High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates including high-thermal-conductivity diamond are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of the thermal resistances at the GaN-diamond interfaces for two generations $(1^{st}$ and $2^{nd})$ of GaN-on-diamond substrates using a combination of picosecond time-domain thermoreflectance (TDTR) and nanosecond transient thermoreflectance (TTR) techniques. Two flipped-epitaxial samples are presented to determine the thermal resistances of the AlGaN/AlN transition layer. For the $2^{nd}$ generation samples, electrical heating and thermometry in nanopatterned metal bridges confirms the TDTR results. This paper demonstrates that the latter generation samples, which reduce the AlGaN thickness by 75%, result in a strongly-reduced thermal resistance between the GaN and diamond. Further optimization of the GaN-diamond interfaces should provide an opportunity for improved cooling of HEMT devices. |
| Starting Page | 435 |
| Ending Page | 439 |
| File Size | 445579 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424495337 |
| ISSN | 10879870 |
| e-ISBN | 9781424495320 |
| e-ISBN | 9781424495313 |
| DOI | 10.1109/ITHERM.2012.6231463 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-05-30 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thermal resistance Substrates Gallium nitride Thermal conductivity Temperature measurement Diamond-like carbon Time-Domain Thermoreflectance (TDTR) High Electron Mobility Transistors (HEMT) Aluminum nitride diamond Thermal Boundary Resistance (TBR) thermal conductivity |
| Content Type | Text |
| Resource Type | Article |
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