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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ya-Lan Chiou Ching-Ting Lee |
| Copyright Year | 2010 |
| Description | Author affiliation: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China (Ya-Lan Chiou; Ching-Ting Lee) |
| Abstract | AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs exhibited a saturation drain-source current of 0.85 A/mm, a peak extrinsic transconductance of 207 mS/mm, and an off-state breakdown voltage larger than 100V. This significant improvement was owing to the reduction in surface state density, which was resulted from the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface. |
| Starting Page | 1222 |
| Ending Page | 1224 |
| File Size | 832136 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424468898 |
| e-ISBN | 9781424468904 |
| DOI | 10.1109/TENCON.2010.5686365 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-11-21 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Aluminum gallium nitride Gallium nitride HEMTs MODFETs Logic gates Surface treatment Zinc oxide ZnO insulator films AlGaN/GaN MOS-HEMTs pulsed output characteristics vapor cooling condensation syste |
| Content Type | Text |
| Resource Type | Article |
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