NDLI: Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Content Provider	IEEE Xplore Digital Library
Author	Ya-Lan Chiou Ching-Ting Lee
Copyright Year	1963
Abstract	The intrinsic ZnO (i-ZnO) film deposited by a vapor cooling condensation system was used as the gate dielectric layer of the AlGaN/GaN MOS-HEMTs. The chlorine surface treatment was utilized to obtain a high-quality i-ZnO/AlGaN interface due to the reduced surface state density. The chlorine-treated MOS-HEMTs showed the better direct current and pulsed output performances than those of the untreated MOS-HEMTs. The resulting unit gain cutoff frequency and the maximum frequency of oscillation were 9.5 and 19.4 GHz, respectively. The Hooge's coefficient was 7.23 × 10^-6, when the chlorine-treated ZnO-gate MOS-HEMTs operated at 100 Hz and the gate-source voltage of -4 V. Compared with the untreated MOS-HEMTs, the chlorine-treated MOS-HEMTs revealed better performances. The valence-band offset of i-ZnO/AlGaN was measured by X-ray photoelectron spectroscopy. The valence-band offset of the i-ZnO film on the untreated and the chlorine-treated AlGaN was 1.53 and 2.05 eV, respectively. The conduction-band offset of the i-ZnO film on the untreated AlGaN and the chlorine-treated AlGaN was deduced to be 0.77 and 1.29 eV, respectively. The improved performances of the chlorine-treated MOS-HEMTs and the enhanced conduction-band offset of the i-ZnO/AlGaN interface were attributed to the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface by using the chlorine surface treatment.
Sponsorship	IEEE Electron Devices Society
Starting Page	3869
Ending Page	3875
Page Count	7
File Size	1056698
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Surface treatment Gallium nitride Zinc oxide Logic gates MODFETs HEMTs X-ray photoelectron spectroscopy (XPS) Band offset chlorine surface treatment low-frequency noise vapor cooling condensation system
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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