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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shinohara, M. Kawakami, T. Hara, K. Fujiyama, H. Matsuda, Y. Nitta, Y. Nakatani, T. |
| Copyright Year | 2010 |
| Description | Author affiliation: Graduate school of Science and Technology, Nagasaki University, Nagasaki, Japan (Shinohara, M.; Kawakami, T.; Hara, K.; Fujiyama, H.) || TOYO Advanced Technologies, Hiroshima Japan (Nitta, Y.; Nakatani, T.) || Dept. of Electrical and Electronic Engineering, Nagasaki University, Nagasaki, Japan (Matsuda, Y.) |
| Abstract | We used infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS) to investigate the reactions of hydrogen plasma with Si crystal. By hydrogen plasma exposure hydrogen was inserted into the Si crystal, with the changes in the atomic arrangements of Si crystal. |
| Starting Page | 1948 |
| Ending Page | 1950 |
| File Size | 198350 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424468898 |
| e-ISBN | 9781424468904 |
| DOI | 10.1109/TENCON.2010.5686458 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-11-21 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Plasmas Surface treatment Crystals Chemicals Ions Substrates insertion infrared spectroscopy hydrogen plasma Si |
| Content Type | Text |
| Resource Type | Article |
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