NDLI: The study of compensative structure assisted convex and concave corner structures etching by inductively coupled plasma-reactive ion etch (ICP-RIE)

Content Provider	IEEE Xplore Digital Library
Author	Yu-Hsin Lin Yuan-Chieh Cheng Nien-Nan Chu Wensyang Hsu Yu-Hsiang Tang Po-Li Chen Chih-Chung Yang Ming-Hua Hsiao Chien-Nan Hsiao
Copyright Year	2015
Description	Author affiliation: Nat. Appl. Res. Labs., Instrum. Technol. Res. Center, Hsinchu, Taiwan (Yu-Hsin Lin; Yuan-Chieh Cheng; Nien-Nan Chu; Yu-Hsiang Tang; Po-Li Chen; Chih-Chung Yang; Ming-Hua Hsiao; Chien-Nan Hsiao) \|\| Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan (Wensyang Hsu)
Abstract	In this paper, the compensative structure assisted the convex and concave corner structures etch in inductively coupled plasma reactive ion etch (ICP-RIE) have been studied. In anisotropic silicon etching, under the Bosch patent, sequentially alternating etch and passivation cycles can easily achieve high aspect ratio silicon structures. But, the feature size of the convex and concave corner structures are difficult to maintain as original design at the bottom position in deep etch, due to non-vertical movement plasma etch. A compensative structure can obstruct the non-vertical plasma to etch the convex corner structures and reduce the etch lag effect during the etch process leading to better profile at deep etch. The current study systematically investigates plasma condition to verify feasibility of the proposed method, and discusses effect of the gap between compensative structure and convex and concave corner structures at three different gaps of 15, 10, 5μm. It demonstrate the compensative structure with small gap in front of the convex and concave corner structures have better profile at deep ICP-RIE etching.
Sponsorship	IEEE Nanotechnol. Council
Starting Page	491
Ending Page	493
File Size	464564
Page Count	3
File Format	PDF
ISBN	9781467366953
DOI	10.1109/NEMS.2015.7147475
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-07
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Plasmas Silicon Fabrication Patents Passivation Sulfur hexafluoride Inductively-Coupled-Plasma Reactive-Ion-Etch (ICP-RIE) Convex and concave corner structures compensative
Content Type	Text
Resource Type	Article

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