NDLI: Less than 10–13W weak light response for quantum dots photodetector at room temprature

Content Provider	IEEE Xplore Digital Library
Author	Wang, M.J. Jin, X.B. Guo, F.M.
Copyright Year	2015
Description	Author affiliation: Shanghai Key Lab. of Multidimensional Inf. Process., East China Normal Univ., Shanghai, China (Wang, M.J.; Jin, X.B.; Guo, F.M.)
Abstract	In the paper, we report a high photoexcited carrier multiplication photodetector operating at room temperature. The photodetector has double AlAs barriers in which a layer of InAs self-assembled quantum dots and thin quantum well is embedded in the center of the GaAs quantum well. Unlike previous AlGaAs QD-RTD, its shows high sensitivity to the weak light irradiation at low bias voltage and the operating temperature 300 K. Its current responsivity can reach about 7 × $10^{11}$ A/W when 0.01pw 633nm light power and -0.5V bias added. And its response voltage of the capacitance transresistance amplifiers (CTIA) readout circuit shows 7mV at 80μs integration time and 300K. The readout voltage responsivity has reached about $2.7×10^{9}$ V/W. This high multiplication factor is achieved by the quantum dot induced voltage in the QD layer. The high sensitivity features of the photodetector make a promising choice for medical diagnosis, biomolecular science and environmental protection biological samples.
Sponsorship	IEEE Nanotechnol. Council
Starting Page	44
Ending Page	47
File Size	331303
Page Count	4
File Format	PDF
ISBN	9781467366953
DOI	10.1109/NEMS.2015.7147353
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-07
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodetectors Quantum dots Detectors Photonics Sensitivity Temperature sensors Lighting CTIA weak light detection high sensitivity quantum dots and quantum well hybrid structure room temperature
Content Type	Text
Resource Type	Article

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