NDLI: A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

Content Provider	IEEE Xplore Digital Library
Author	Jenn-Tzer Yang Yuan-Hao Lee Yi-Yuan Huang Yu-Min Mu Yen-Ching Ho
Copyright Year	2007
Description	Author affiliation: Ming Hsin Univ. of Sci. & Technol., Hsinchu (Jenn-Tzer Yang; Yuan-Hao Lee; Yi-Yuan Huang; Yu-Min Mu; Yen-Ching Ho)
Abstract	In this paper, a radio frequency (RF) CMOS multiple bands low noise amplifier using a high-Q active inductor load with a binary code band selector suitable for multi-standards wireless applications is proposed. By employing an improved high-Q active inductor including two bits binary controlled code, the multi-band low noise amplifier operating at four different frequency bands is realized. The proposed amplifier circuit is designed in TSMC 0.18-um CMOS technology. Based on the simulation results, the amplifier can operate at 900 MHz, 1.8 GHz, 1.9 GHz, and 2.4 GHz with forward gain $(S_{21})$ of 31.15 dB, 30.82 dB, 30.61 dB, and 28.4 dB, and the noise figure (NF) of 0.563 dB, 0.558 dB, 0.578 dB, and 0.759 dB, respectively. Furthermore, the power dissipation of this amplifier can retain constant at all operating frequency bands and consume around 11.66 mW from 1.8-V power supply. The occupied area of this amplifier is about 158 times 76 $mm^{2}.$
Starting Page	1001
Ending Page	1004
File Size	4533317
Page Count	4
File Format	PDF
ISBN	9781424406364
DOI	10.1109/EDSSC.2007.4450296
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-12-20
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Active inductors Active noise reduction Low-noise amplifiers Radiofrequency amplifiers Radio frequency Circuit noise CMOS technology Binary codes Circuit simulation Noise figure Multi-Standards CMOS High-Q Active Inductor Low Noise Amplifier Multiple Band
Content Type	Text
Resource Type	Article

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