NDLI: A hydrogen gas sensitive Pt-InP metal-semiconductor Schottky diode

Content Provider	IEEE Xplore Digital Library
Author	Tsai, Y.Y. Lin, K.W. Hung, C.W. Tsai, T.H. Liu, W.C.
Copyright Year	2007
Description	Author affiliation: Nat. Cheng-Kung Univ., Tainan (Tsai, Y.Y.)
Abstract	A new and interesting compound semiconductor Schottky diode hydrogen sensor based on a $Pt-In_{0.5}Al_{0.5}P$ metal-semiconductor (MS) structure is fabricated and demonstrated. The hydrogen sensing characteristics including hydrogen detection sensitivity of the studied device under different hydrogen concentrations and temperature are measured and studied. The hydrogen detection sensitivity is related to a change in the contact potential at the Pt-semiconductor interface. Experimentally, the studied hydrogen sensor can be operated systematically under the applied bi-polarity voltage biases. When the temperature is increased from 30 to 250degC, the hydrogen relative sensitivity ratio (Sr), under the applied forward (reverse) bias of 0.3 V, is decreased from 181.2% (250.3%) to 28.2% (33.5%) upon exposing to the 9970 ppm $H_{2}/air$ gas. Moreover, the hydrogen effect in the Schottky barrier height lowering is observed.
Starting Page	287
Ending Page	290
File Size	2063003
Page Count	4
File Format	PDF
ISBN	9781424406364
DOI	10.1109/EDSSC.2007.4450118
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-12-20
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Schottky diodes Gallium arsenide Temperature sensors Temperature measurement Schottky barriers Gases Gas detectors Sensor phenomena and characterization Sensor systems
Content Type	Text
Resource Type	Article

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