NDLI: Investigation of Analog/RF Performance and Reliability Behavior of Silicon Nanowire MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Ru Huang Runsheng Wang Jing Zhuge Yu Tian Zhenhua Wang Dong-Won Kim Donggun Park Yangyuan Wang
Copyright Year	2007
Description	Author affiliation: Peking Univ., Beijing (Ru Huang; Runsheng Wang; Jing Zhuge; Yu Tian; Zhenhua Wang)
Abstract	- In this paper, the analog/RF performance and reliability behavior of silicon nanowire transistors (SNWTs) are investigated. Analog/RF Figures-of-Merit (FoMs) of SNWTs are studied, including transconductance efficiency, intrinsic gain, cutoff frequency and maximum oscillation frequency. The impact of device parameter fluctuations is also evaluated. In addition, hot carrier injection (HCI) and negative bias temperature instability (NBTI) reliability of n-type and p-type SNWTs is studied. The worse-case bias of HCI and HCI lifetime for the n-type SNWTs are discussed, as well as DC/AC NBTI of the p-type SNWTs and dependence of frequency and gate voltage. Abnormal NBTI fluctuation in short-channel SNWTs was observed and analyzed, with a new on-line $I_{g}$ method demonstrated for the suppression of this NBTI fluctuation.
Starting Page	79
Ending Page	82
File Size	4731607
Page Count	4
File Format	PDF
ISBN	9781424406364
DOI	10.1109/EDSSC.2007.4450066
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-12-20
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Silicon MOSFETs Niobium compounds Titanium compounds Fluctuations Human computer interaction Cutoff frequency Transconductance Hot carrier injection
Content Type	Text
Resource Type	Article

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