NDLI: Effect of UV Illumination on Inverted-Staggered a-Si:H Thin Film Transistors

Content Provider	IEEE Xplore Digital Library
Author	Yiming Li Jen-Chung Lou Chung-Le Chen Chih-Hong Hwang Shuoting Yan
Copyright Year	2007
Description	Author affiliation: Nat. Chiao-Tung Univ., Hsinchu (Yiming Li)
Abstract	The hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) have been widely used as switching devices for large-area electronics, such as active matrix liquid crystal displayers. Effect of UV Illumination on improving device switching characteristics has been experimentally observed and studied. However, the inside mechanisms including state and density of traps, are not clear yet. In this work, to characterize the optimal device characteristics, we thus solve a set of Poisson, electron/hole continuity, and lattice heat flow equations coupling with density and distribution of trap states in the a-Si:H layer. The I-V characteristics of the inverted staggered a-Si:H TFT's with different magnitude of UV light illumination is for the first time calculated and carefully calibrated with experimental measured data. It is found that the traps states in the a-Si:H layer and the movement of Fermi level from the conduction band after UV illumination. This study provides an insight into the effect of UV illumination and the mechanism to improve the switching characteristics of a-Si TFTs.
Starting Page	225
Ending Page	228
File Size	4062954
Page Count	4
File Format	PDF
ISBN	9781424406364
DOI	10.1109/EDSSC.2007.4450103
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-12-20
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Lighting Thin film transistors Active matrix liquid crystal displays Liquid crystal devices Electron traps Amorphous silicon Charge carrier processes Lattices Poisson equations Time measurement
Content Type	Text
Resource Type	Article

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