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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | McDonough, C. Backes, B. Wei Wang Geer, R.E. |
| Copyright Year | 2011 |
| Description | Author affiliation: College of Nanoscale Science and Engineering, University at Albany, SUNY, NY, USA (McDonough, C.; Backes, B.; Wei Wang; Geer, R.E.) |
| Abstract | The thermal and spatial variation of Cu through silicon via (TSV)-induced stress in 300mm Si wafers has been investigated for both isolated TSVs and TSV arrays using top-down and cross-sectional spectral microRaman imaging. The TSV-induced stress in Si results from plastic yield of the Cu, is compressive in the immediate vicinity of the TSV, and transitions to a tensile state at larger separations - in quantitative agreement with finite element modeling (FEM). TSV arrays (linear and square) lead to substantial tensile stress enhancement within the array. Moreover, thermal annealing showed that the intra-array Si stress field became more compressive with increased post-CMP thermal annealing while the Si stress-field external to the arrays exhibited little change. This may open potential avenues for reduction of TSV-induced Si stress in 3DICs. |
| File Size | 848627 |
| File Format | |
| ISBN | 9781424491131 |
| ISSN | 19381891 |
| e-ISBN | 9781424491124 |
| e-ISBN | 9781424491117 |
| DOI | 10.1109/IRPS.2011.5784530 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-04-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Through-silicon vias Copper Temperature measurement Annealing Tensile stress stress 3D integrated circuit through-silicon via |
| Content Type | Text |
| Resource Type | Article |
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