NDLI: High reliable strain measurement for power devices using STEM-CBED method

Content Provider	IEEE Xplore Digital Library
Author	Nakanishi, N. Arie, H. Maeda, H. Hirose, Y. Hattori, N. Koyama, T. Murakami, E.
Copyright Year	2011
Description	Author affiliation: Renesas Electronics Corp., Devices & Analysis Technology Division, 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan (Nakanishi, N.; Arie, H.; Maeda, H.; Hirose, Y.; Hattori, N.; Koyama, T.; Murakami, E.)
Abstract	Scanning transmission electron microscopy convergent beam electron diffraction (STEM-CBED) was applied to strain analysis of deep trench electrodes for devices such as power devices. Source-drain current leak, which was one of the crucial failures of this kind of structure, depends on boron concentration in boron doped poly-Si (BP) layers. TEM/STEM and diffraction analysis showed that the BP layers consist of epitaxial phase and poly-Si phase, and the proportion of these phases depends on the boron concentration in the BP layer. Clear strain distribution around the BP layers was obtained with STEM-CBED. This revealed that the origin of the strain is volume shrinkage of the epitaxial phase in the BP layer, and the poly-Si phase acts as buffer against this strain. Relationship between Si phases and boron concentration in the BP layers was examined with STEM and scanning capacitance microscopy. These analyses suggested that boron segregation occurred in samples having a higher boron concentration, and prevented epitaxial growth in the BP layers. As a result, the core of the BP layer remains as poly-Si or amorphous Si and acts as strain buffer. Our analysis concluded that boron concentration in the BP layer is one of the most important factors enabling high production yield for the structure.
File Size	3680723
File Format	PDF
ISBN	9781424491131
ISSN	19381891
e-ISBN	9781424491124
e-ISBN	9781424491117
DOI	10.1109/IRPS.2011.5784525
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Strain Boron Epitaxial growth Silicon Strain measurement Substrates Diffraction Boron doped poly-Si Convergent beam electron diffraction Scanning transmission electron microscopy Power devices
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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