NDLI: A comprehensive process engineering on TDDB for direct polishing ultra-low k dielectric Cu interconnects at 40nm technology node and beyond

Content Provider	IEEE Xplore Digital Library
Author	Lin, W.C. Tsai, T.C. Hsu, H.K. Lin, J. Tsao, W.C. Chen, W. Cheng, C.M. Hsu, C.L. Liu, C.C. Hsu, C.M. Lin, J.F. Huang, C.C. Wu, J.Y.
Copyright Year	2011
Description	Author affiliation: United Microelectronics Corp., Advanced Technology Development Division, No 18, Nanke 2nd Rd. Tainan Science Park, Sinshih, Tainan County 741, Taiwan, R.O.C. (Lin, W.C.; Tsai, T.C.; Hsu, H.K.; Lin, J.; Tsao, W.C.; Chen, W.; Cheng, C.M.; Hsu, C.L.; Liu, C.C.; Hsu, C.M.; Lin, J.F.; Huang, C.C.; Wu, J.Y.)
Abstract	The failure ratios of the three typical time-dependent dielectric breakdown (TDDB) failure modes, including top interface, sidewall and bottom corner areas, have been identified for a direct polishing ultra low k (ULK) dielectric Cu back-end-of-line (BEOL) structure at 40nm node. The Cu surface roughness of the metal lines, and the adhesion and thickness of the metal capping layers are strongly correlated to the top interface failure mode. The dielectric constant of the ULK and the concentration of the aluminum-doped Cu (CuAl) seed layer could be related to the sidewall failure mode. The bottom corner failures are induced by inappropriate Cu barrier re-sputter processes. In this study, the TDDB reliability performance can be effectively improved by evaluating a post-Cu chemical mechanical polishing (Cu CMP) cleaning process with smooth Cu surface roughness, developing a better step coverage with multi-layer capping layer, using a slightly higher dielectric constant ULK film, replacing a conventional pure Cu with a CuAl seed layer and optimizing the Cu barrier layer deposition process. The lifetime of the TDDB can be significantly improved over three orders (larger than 10000 years) as implementing an optimized integrated Cu with ULK BEOL structures at 40nm technology node.
File Size	1948170
File Format	PDF
ISBN	9781424491131
ISSN	19381891
e-ISBN	9781424491124
e-ISBN	9781424491117
DOI	10.1109/IRPS.2011.5784470
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Films Surface roughness Rough surfaces Surface treatment Dielectrics CMP TDDB ULK BEOL aluminum-doped Cu seed barrier
Content Type	Text
Resource Type	Article

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