NDLI: Zero voltage switching performance of 1200V SiC MOSFET, 1200V silicon IGBT and 900V CoolMOS MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Kadavelugu, A. Baliga, V. Bhattacharya, S. Das, M. Agarwal, A.
Copyright Year	2011
Description	Author affiliation: CREE Inc, Durham, NC, USA (Das, M.; Agarwal, A.) \|\| FREEDM Systems Center, North Carolina State University, Raleigh, USA (Kadavelugu, A.; Baliga, V.; Bhattacharya, S.)
Abstract	This paper evaluates zero voltage switching (ZVS) performance of 1200 V SiC MOSFET with respect to 1200 V silicon IGBTs (PT and FST) and 900 V CoolMOS MOSFET. The converter topology chosen for the study is a dual active bridge (DAB) dc-dc converter. Typically, in a high power DAB converter, ZVS is achieved through LC resonance of leakage inductance of the high frequency transformer and external capacitance across the drain and source (or collector and emitter for IGBTs) terminals. However, the SiC MOSFET offers a completely new set of parameters for ZVS when compared to its Silicon counterparts. In this paper, it is shown that a high power converter is possible with ZVS turn-on as well as low-loss turn-off using SiC MOSFETs, with out adding any external capacitance. The unique features of the SiC MOSFET that helps in achieving this are its CDS value, the variation of CDS with drain voltage, and low current turn-off time. The corresponding parameters of the silicon IGBTs and CoolMOS devices are presented to show the uniqueness of the SiC MOSFET. Simulation results corresponding to a 6 kW, 100 kHz DAB converter are presented with the SiC MOSFET as well as the silicon IGBTs and CoolMOS to provide a comparative ZVS performance.
Starting Page	1819
Ending Page	1826
File Size	771450
Page Count	8
File Format	PDF
ISBN	9781457705427
e-ISBN	9781457705410
DOI	10.1109/ECCE.2011.6064006
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Silicon carbide Switches Zero voltage switching MOSFET circuits Capacitance Silicon
Content Type	Text
Resource Type	Article

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