NDLI: Design and optimization of 700V HVIC technology with multi-ring isolation structure

Content Provider	IEEE Xplore Digital Library
Author	Nam-Chil Moon Kyung-Wook Kwon Chang-Jun Lee Kun-Sik Sung Bum-Seok Kim Kwang-Dong Yoo Heung-Soo Park
Copyright Year	2013
Description	Author affiliation: Dongbu Hitek, Bucheon, South Korea (Nam-Chil Moon; Kyung-Wook Kwon; Chang-Jun Lee; Kun-Sik Sung; Bum-Seok Kim; Kwang-Dong Yoo; Heung-Soo Park)
Abstract	For high side gate driver IC, we applied to single p-type isolation technic between high side region and 700V LDMOS (lateral double-diffused MOS) drain to reduce electric potential of junction termination by the crossing drain metal of 700V LDMOS. This single p-type isolation has low doping concentration to be fully depleted for maintaining a high voltage, normally more than 700V. It is limited to remove the cross-talk problem caused by leakage current between high side region and drain of 700V LDMOS in HVIC (High Voltage Integrated Circuits) using self-shielding structure. So, we are proposed to multi-ring p-type isolation technic to clear leakage issue between two LDMOS used as level shifters. And a robust high side gate driver IC adapting new self-shielding concept with perfect isolation using p-type multi-ring structure is experimentally realized. Experiment results have shown that over 850V breakdown voltage and no leakage current between LDMOS drain and high side region even though the drain voltage of LDMOS is lower than 2V. In addition, highly doped $n^{+}$ buried layer in the high side region of proposed structure led good dV/dt immunity.
Starting Page	151
Ending Page	154
File Size	1166368
Page Count	4
File Format	PDF
ISBN	9781467351348
ISSN	1943653X
e-ISBN	9781467351362
DOI	10.1109/ISPSD.2013.6694451
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuits Logic gates Junctions Leakage currents Metals Periodic structures Switches
Content Type	Text
Resource Type	Article

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