NDLI: Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO gate insulator

Content Provider	IEEE Xplore Digital Library
Author	Woojin Ahn Ogyun Seok Min-Woo Ha Young-Shil Kim Min-Koo Han
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea (Woojin Ahn; Ogyun Seok; Young-Shil Kim; Min-Koo Han) \|\| Korea Electron. Technol. Inst., Seongnam, South Korea (Min-Woo Ha)
Abstract	Normally-off AlGaN/GaN MOS HEMTs were successfully fabricated and investigated by simple KOH wet etch and rf-sputtered $HfO_{2}$ as a gate insulator. The proposed KOH wet etch resulted in an adequate recess-depth and smooth etched surface. The gate-recessed HEMT exhibits threshold voltage $(V_{th})$ shifts from -3 to 1.5 V after 150 s KOH-wet etch. The breakdown voltage of 1580 V and Ron, sp of 8.09 $mΩ·cm^{2}$ was measured in the AlGaN/GaN HEMT with the gate-drain distance of 20 μm-long. The high FOM (figure of merit) of 308 $MW/cm^{2}$ was achieved. Our experimental results indicate that the proposed simple KOH wet etching and rf sputtered $HfO_{2}-gate$ insulator may be promising for the normally-off AlGaN/GaN MOS HEMTs fabrication.
Starting Page	311
Ending Page	314
File Size	777947
Page Count	4
File Format	PDF
ISBN	9781467351348
ISSN	1943653X
e-ISBN	9781467351362
DOI	10.1109/ISPSD.2013.6694411
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Logic gates HEMTs MODFETs Aluminum gallium nitride Hafnium compounds Insulators RF-Sputtered HfO2 AlGaN/GaN HEMTs Normally-off operation KOH wet etch
Content Type	Text
Resource Type	Article

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