NDLI: New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Bahl, S.R. Van Hove, M. Xuanwu Kang Marcon, D. Zahid, M. Decoutere, S.
Copyright Year	2013
Description	Author affiliation: IMEC, Leuven, Belgium (Van Hove, M.; Xuanwu Kang; Marcon, D.; Zahid, M.; Decoutere, S.) \|\| Texas Instrum., Santa Clara, CA, USA (Bahl, S.R.)
Abstract	We find that off-state breakdown in AlGaN/GaN insulated-gate HEMTs can occur at the source-side of the gate with increase in the drain voltage. This new finding is borne out by extensive electrical measurements and confirmed with the OBIRCH (Optical Beam Induced Resistance CHange) technique. It is explained by a hypothesis whereby holes generated at high Vds flow to the source-side of the gate, and due to the low valence band offset, enter the gate insulator and damage it. Holes also cause threshold voltage shifts that turn the device on. The damage occurs in discrete spots, as would be expected by defects. Finally, we show improved breakdown voltage with a better gate-dielectric interface.
Starting Page	419
Ending Page	422
File Size	1039452
Page Count	4
File Format	PDF
ISBN	9781467351348
ISSN	1943653X
e-ISBN	9781467351362
DOI	10.1109/ISPSD.2013.6694434
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Gallium nitride Aluminum gallium nitride Electric breakdown Aluminum oxide Silicon HEMTs
Content Type	Text
Resource Type	Article

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