NDLI: Suppressing channel-conduction during dynamic avalanche to improve high density power MOSFET ruggedness and reverse recovery softness

Content Provider	IEEE Xplore Digital Library
Author	Jingjing Chen Radic, L. Henson, T.
Copyright Year	2013
Description	Author affiliation: Int. Rectifier, El Segundo, CA, USA (Jingjing Chen; Radic, L.; Henson, T.)
Abstract	This paper demonstrates a new phenomenon for the state-of-the-art ultra-high density trench power MOSFET: channel conduction during dynamic avalanche even when gate voltage is well below the nominal threshold voltage. In particular, a comprehensive study has been done through mixed-mode 2D device simulation and measurement, showing that the channel conduction during avalanche can not only strongly influence body diode reverse recovery behavior, but also impact device ruggedness during Unclamped Inductive Switching (UIS). Results show that by suppressing the channel conduction, diode reverse recovery softness can be improved by 23% for the same reverse peak current, and the UIS avalanche current can be improved by 7%, which is significant for the harsh automotive DC-DC converter and hybrid vehicle motor inverter applications.
Starting Page	321
Ending Page	324
File Size	1957518
Page Count	4
File Format	PDF
ISBN	9781467351348
ISSN	1943653X
e-ISBN	9781467351362
DOI	10.1109/ISPSD.2013.6694413
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Threshold voltage Impact ionization Junctions Logic gates Current density Electric potential body diode reverse recovery trench Power MOSFET high current density channel conduction dynamic avalanche
Content Type	Text
Resource Type	Article

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