NDLI: Epitaxial GeSi strained layer on SIMOX for confinement of threading dislocations

Content Provider	IEEE Xplore Digital Library
Author	Cortesi, E. Namavar, F. Kalkhoran, N.M. Manke, J.M. Buchanan, B.L.
Copyright Year	1990
Description	Author affiliation: Spire Corp., Bedford, MA, USA (Cortesi, E.; Namavar, F.; Kalkhoran, N.M.; Manke, J.M.; Buchanan, B.L.)
Abstract	Improvement of the crystalline quality of epitaxial silicon grown on separation by implantation of oxygen (SIMOX) material was investigated by confining the threading dislocations in the silicon top layer with a GeSi strained layer. The standard SIMOX used was produced by implantation of 1.6*10/sup 18/ O+/cm/sup 2/ at 160 keV, followed by annealing for 6 h at 1300 degrees C in N/sub 2/. Thin Si/GeSi/Si epitaxial structures were grown on the SIMOX and on Si substrates by chemical vapor deposition (CVD). The material was evaluated using a variety of methods, including cross-sectional transmission electron microscopy (XTEM), plane view TEM, and Rutherford backscattering spectroscopy (RBS)/channeling. The GeSi strained layer grown by CVD appears to be high quality, and no misfit dislocations were observed for Si/GeSi/Si structures grown at the same time on bulk silicon. CVD may also be a simple and economical method for growing Si/GeSi/Si structures for device applications such as heterojunction bipolar transistors.
Starting Page	123
Ending Page	124
File Size	201191
Page Count	2
File Format	PDF
ISBN	0879425733
DOI	10.1109/SOSSOI.1990.145741
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-10-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Germanium silicon alloys Silicon germanium Crystallization Crystalline materials Annealing Substrates Chemical vapor deposition Transmission electron microscopy Backscatter Spectroscopy
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Nano-structured multi-layer SiGe alloy grown by ultra high vacuum chemical vapor deposition

Gettering of threading dislocations and oxide precipitates in SIMOX material

Properties of ion-implanted strained-Si/SiGe heterostructures

High quality SiGe epitaxial layer grown by RPCVD using dichlorosilane

Formation of SiGe Alloy Layers in SIMOX Substrates by $Ge^{+}$ Implantation

High-mobility GeSi PMOS on SIMOX

SiGe nanostructures

Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique

High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si Buffer by Ultra-High-Vacuum Chemical Vapor Deposition

Epitaxial GeSi strained layer on SIMOX for confinement of threading dislocations

Similar Documents

Nano-structured multi-layer SiGe alloy grown by ultra high vacuum chemical vapor deposition

Gettering of threading dislocations and oxide precipitates in SIMOX material

Properties of ion-implanted strained-Si/SiGe heterostructures

High quality SiGe epitaxial layer grown by RPCVD using dichlorosilane

Formation of SiGe Alloy Layers in SIMOX Substrates by $Ge^{+}$ Implantation

High-mobility GeSi PMOS on SIMOX

SiGe nanostructures

Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique

High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si Buffer by Ultra-High-Vacuum Chemical Vapor Deposition

Epitaxial GeSi strained layer on SIMOX for confinement of threading dislocations