NDLI: A general model of the thin-film SOI-MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Abel, H.B.
Copyright Year	1990
Description	Author affiliation: Dept. of Electron Devices & Circuits, Duisburg Univ., Germany (Abel, H.B.)
Abstract	A model for a thin-film SOI MOSFET which is valid in all regions of inversion is presented. It takes into account all conditions at the back surface of the silicon film, including inversion. To achieve an analytical expression for the inversion layer charge as a function of the front and back surface potentials, the contribution of the accumulation layer to the total charge is neglected. Two-dimensional simulation results show that the variations of the front and back surface potentials along the channel are nearly equal. This simplifies the integration of the inversion layer charge along the channel, resulting in explicit formulas for the drift and diffusion terms of the drain current in both channels. The SOI-MOSFET model offers all features known from the charge sheet model. Due to the accurate computation of the surface potentials and the inclusion of the leakage current at the back interface the model gives an improved description of the substrate bias influence on transistor operation.
Starting Page	105
Ending Page	106
File Size	149356
Page Count	2
File Format	PDF
ISBN	0879425733
DOI	10.1109/SOSSOI.1990.145731
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-10-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Silicon Thin film circuits Electron devices Semiconductor films MOSFET circuits Poisson equations Threshold voltage Current measurement Computer interfaces
Content Type	Text
Resource Type	Article

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