NDLI: Native silicon oxide agglomeration prior to solid-phase epitaxy using rapid thermal processing

Content Provider	IEEE Xplore Digital Library
Author	Leung, D.L. Knudsen, J.F. Swanson, D.J. Hill, B.J. Mayer, D.C.
Copyright Year	1990
Description	Author affiliation: Aerospace Corp., El Segundo, CA, USA (Leung, D.L.; Knudsen, J.F.; Swanson, D.J.; Hill, B.J.; Mayer, D.C.)
Abstract	The effect of process parameters on the quality of recrystallized material using rapid thermal processing (RTP) was evaluated. Both X-ray rocking curve and Read camera analysis were used to verify the crystalline quality of the regrown material. It is shown that RTP is a viable method for agglomerating the interfacial oxide at a silicon/polysilicon boundary before epitaxial growth. The material quality was observed to improve with increasing RTP time and temperature cycles. The optimum thermal anneal cycle was 600 degrees C for 18 h and 800 degrees C for 3 h. The improvement in the number of defects over the previously used ion implantation process is about two orders of magnitude.
Starting Page	57
Ending Page	58
File Size	170464
Page Count	2
File Format	PDF
ISBN	0879425733
DOI	10.1109/SOSSOI.1990.145708
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-10-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Epitaxial growth Rapid thermal processing Temperature Annealing Crystallization Ion implantation Crystalline materials Cameras Surface cleaning
Content Type	Text
Resource Type	Article

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