NDLI: A simple model to predict the holding voltage for SOI MOSFETs operating in the latch state

Content Provider	IEEE Xplore Digital Library
Author	McDaid, L.J. Hall, S. Marsland, J.S. Eccleston, W. Alderman, J.C. Cook, K.R. Bunyan, R.J. Uren, M.J.
Copyright Year	1990
Description	Author affiliation: Dept. of Electr. Eng. & Electron., Liverpool Univ., UK (McDaid, L.J.; Hall, S.; Marsland, J.S.; Eccleston, W.; Alderman, J.C.; Cook, K.R.; Bunyan, R.J.; Uren, M.J.)
Abstract	A simple model is presented using one-dimensional bipolar theory to predict the holding voltage for silicon-on-insulator MOSFETs operating in the latch state. The holding voltage is a function of channel length as predicted by the model, and good agreement with experimental data is obtained for a recombination lifetime of 0.7 ns and k=0.015. The model also predicts that if the lifetime is reduced to 0.4 ns the holding voltage is only slightly increased for short-channel devices suggesting that decreasing the lifetime in the body by external means (e.g., gold doping) has little effect for small gate lengths. In addition the model can also predict the temperature dependence of the holding voltage.
Starting Page	19
Ending Page	20
File Size	140074
Page Count	2
File Format	PDF
ISBN	0879425733
DOI	10.1109/SOSSOI.1990.145688
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-10-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Predictive models Voltage MOSFETs Latches Equations Circuits P-n junctions Ionization Neodymium Radar
Content Type	Text
Resource Type	Article

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