NDLI: Simultaneous Formation of Through Wafer Electrical Interconnects and Highly Dense & Uniform Nickel Tips for Silicon-Cantilever Probe-Cards

Content Provider	IEEE Xplore Digital Library
Author	Fei Wang Xinxin Li Yuelin Wang Songlin Feng
Copyright Year	2007
Description	Author affiliation: Chinese Acad. of Sci., Shanghai (Fei Wang; Xinxin Li; Yuelin Wang; Songlin Feng)
Abstract	Presented is a novel MEMS probe-card for wafer-level IC testing. In one 4-inch wafer, a total of 17300 cantilever-tip probes are fabricated, with 90 mum pitch for adjacent probes. Combined with the silicon cantilevers formed by advanced bulk micromachining techniques, the electroplated nickel is used to simultaneously form the probing tips and the through-wafer interconnects (TWIs). The TWIs are designed to transfer the testing signals from the dies under test (DUT) at the wafer bottom side to the I/O interface at the front side. The cantilever spring-constant is measured as about 1520 N/m. The contact resistance values on Al, Cu and Au pads on DUT wafers are measured always below 1 Omega, while the current-leakage is about 90 pA under 5 V applied voltage between two adjacent tips.
Starting Page	2051
Ending Page	2054
File Size	1179704
Page Count	4
File Format	PDF
ISBN	1424408415
DOI	10.1109/SENSOR.2007.4300567
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-10
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nickel Probes Electrical resistance measurement Micromechanical devices Integrated circuit testing Silicon Micromachining Signal design Contact resistance Gold electric contact MEMS probe card silicon bulk micromachining electroplated nickel
Content Type	Text
Resource Type	Article

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