NDLI: Crystallographic influence on nanomechanics of ultra-thin silicon resonators

Content Provider	IEEE Xplore Digital Library
Author	Wang, D.F. Ono, T. Esashi, M.
Copyright Year	2003
Description	Author affiliation: Graduate Sch. of Eng., Tohoku Univ., Sendai, Japan (Wang, D.F.; Ono, T.)
Abstract	The influence of crystallographic orientations on nanomechanical properties of 50-nm-thick single crystalline silicon resonators was investigated by examining the effects of surface treatments, such as flash-heating and O/sub 2/ adsorption on the mechanical quality factors (/spl Qscr/;-factors) and resonant frequencies. Cantilevers with [100], [110] and [111] orientations were examined in this work. A 1500-nm-thick [100] cantilever array was also studied for comparison. The loss mechanisms in energy dissipation were discussed in terms of support loss, thermoelastic loss, as well as surface loss. The results obtained in this study provide an insight into the understanding of surface effects on nanomechanics of resonating elements, and provide design guidelines for future's nanoengineered devices for ultimate sensing.
Sponsorship	IEEE Electron Devices Soc
Starting Page	336
Ending Page	339
File Size	306538
Page Count	4
File Format	PDF
ISBN	0780377311
DOI	10.1109/SENSOR.2003.1215321
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallography Silicon Nanoscale devices Mechanical factors Crystallization Surface treatment Q factor Resonant frequency Energy dissipation Thermoelasticity
Content Type	Text
Resource Type	Article

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