NDLI: Impact of V/III flux ratio and Si-doping concentration on GaN grown by metalorganic chemical-vapor deposition on sapphire substrate

Content Provider	IEEE Xplore Digital Library
Author	Lay Theng Tan Peng Chen Soo Jin Chua
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore (Lay Theng Tan)
Abstract	The impact of growth regime on surface morphology, crystalline structural and electrical properties of n-type GaN using metalorganic chemical-vapor deposition (MOCVD), with intentional Si doping (SiH/sub 4/, 50.0 ppm) levels ranging from 2.5 sccm to 22.0 sccm (electron concentration varying from 1.46/spl times/10/sup 17/ to 1.07/spl times/10/sup 19/ cm/sup -3/) and V/III flux ratio from 1250 to 2800 (i.e. from Ga-rich regime to N-rich regime), are investigated. It has been found out that the V/III flux ratio affects the incorporation of Ga and N atoms into the film, and the screw dislocation generation. As for Si-incorporation, it increases the surface roughness and changes the edge dislocation generation. In this experiment, it shows clearly that those samples with V/III flux ratio of /spl sim/1500 which is close to the equilibrium condition exhibit the best properties.
Sponsorship	Mems Technol.(M) Sdn, Bhd Kriptic Devices (M) Sdn Bhd IEEE Electron Devices Soc
Starting Page	172
Ending Page	176
File Size	253938
Page Count	5
File Format	PDF
ISBN	0780375785
DOI	10.1109/SMELEC.2002.1217799
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-19
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Chemicals Surface morphology Substrates Crystallization MOCVD Doping Electrons Fasteners Rough surfaces
Content Type	Text
Resource Type	Article

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