NDLI: Effect of vanadium doping on the semiconducting properties of La/sub 0.67/Ca/sub 0.33/MnO/sub 3/ ceramics

Content Provider	IEEE Xplore Digital Library
Author	Halim, S.A. Lim, K.P. Chow, S.P. Zainuddin, H. Koh, S.F. Chik, A.
Copyright Year	2002
Description	Author affiliation: Dept. of Phys., Univ. Putra Malaysia, Selangor, Malaysia (Halim, S.A.; Lim, K.P.; Chow, S.P.; Zainuddin, H.; Koh, S.F.; Chik, A.)
Abstract	Manganites perovskite compound exhibit the transition of semiconducting to metallic conductivity at T/sub P/ and the magnetic properties observed in the /spl chi/'-temperature curves show transition from paramagnetic to ferromagnetic at T/sub C/. The coexistence of T/sub C/ and T/sub P/ are due to the double exchange interaction of two electrons in Mn/sup 3+/-O/sup 2-/-Mn/sup 4+/ and Mn/sup 4+/-O/sup 2-/-Mn/sup 3+/ configuration which brings the system below T/sub C/ into a metallic state. Hence it is observed that the Curie temperature T/sub C/ is closely related to the sharp decrease in the electrical resistivity of the samples. However, both transition temperatures shift to lower temperature as vanadium doping increases indicating the loss of ferromagnetic order and transport properties. As for the transport properties the semiconductor model ln(/spl sigma/)/spl sim/(E/sub a//kT) was used to explain the conduction mechanism of perovskite manganites above T/sub P/. It was concluded that the total conductivity, /spl sigma//sub tot/, consists of the intrinsic and the extrinsic components, such that /spl sigma//sub tot/=/spl sigma//sub int/+/spl sigma//sub ext/. The total activation energy increases initially from 0.150 eV to maximum value of 0.228 eV at x=0.01 and decreases to 0.1 eV at the composition of x=0.30.
Sponsorship	Mems Technol.(M) Sdn, Bhd Kriptic Devices (M) Sdn Bhd IEEE Electron Devices Soc
Starting Page	534
Ending Page	538
File Size	190003
Page Count	5
File Format	PDF
ISBN	0780375785
DOI	10.1109/SMELEC.2002.1217880
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-19
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device doping Semiconductivity Temperature Conductivity Magnetic properties Paramagnetic materials Elementary particle exchange interactions Electrons Electric resistance Mechanical factors
Content Type	Text
Resource Type	Article

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