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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yingbin Zhu Ang, L.K. |
| Copyright Year | 2011 |
| Description | Author affiliation: School of Electric and Electronic Engineering, Nanyang Technological University, Singapore, 639798 (Yingbin Zhu; Ang, L.K.) |
| Abstract | For high current transport in a medium, where the space charge effects of injected current are important, it is generally termed as space charge limited (SCL) current. In the one-dimensional planar gap, the SCL current density is given by the classical Child-Langmuir $law^{1}.$ The corresponding SCL current in a trap-free solid is known as Mott-Gurney $law^{2},$ while the trap-limited current density for a trap-filled solid with exponentially distributed traps is described as the Mark-Helfrich $law^{3}.$ |
| Starting Page | 1 |
| Ending Page | 1 |
| File Size | 35470 |
| Page Count | 1 |
| File Format | |
| ISBN | 9781612843308 |
| ISSN | 07309244 |
| e-ISBN | 9781612843292 |
| e-ISBN | 9781612843285 |
| DOI | 10.1109/PLASMA.2011.5993135 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-06-26 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Dielectrics Solids Space charge Current density USA Councils Hafnium oxide Dielectric measurements |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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