NDLI: Plasma assisted chemical vapor deposition of diamond and applications: from large-grain polycrystalline diamond to nanocrystalline diamond

Content Provider	IEEE Xplore Digital Library
Author	Yonhua Tzeng
Copyright Year	2004
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA (Yonhua Tzeng)
Abstract	Summary form only given. Growth of diamond with extreme physical and chemical properties can be achieved in electrical discharges under properly controlled plasma chemistry at temperatures and pressures where graphite, instead of diamond, is thermodynamically stable. This discovery led us to wide open opportunities for applying the extreme hardness, thermal conductivity, optical and microwave transparency, chemical inertness, wear resistance, coefficient of thermal expansion, dielectric strength, carrier saturation velocities, and many other interesting properties of diamond crystals and coatings to industrial and scientific applications. Plasma density, plasma chemistry, as well as physical processes in plasmas such as ion bombardment of substrates and/or the growing diamond surfaces all play important roles in the nucleation and the growth of diamond on various substrates. Plasmas generated in gaseous mixtures such as methane and hydrogen with controlled dilution by argon as well as plasmas generated in vapor mixtures formed from properly mixed liquid solutions alone have been developed and optimized for the nucleation and growth of diamond of selected crystal orientations, grain sizes, and doping levels. A systematic experimental project has also been conducted to explore diamond nucleation and growth by plasmas generated in gas mixtures of methane and hydrogen that are highly diluted by more than 90% argon. Growth of well-faceted microcrystalline diamond films with preferred (100) or (111) crystal orientation as well as nanocrystalline diamond films could be tailored by controlling plasma parameters such as microwave power density, gas pressures and compositions, and substrate temperatures.
Sponsorship	Plasma Sci. and Applications Committee of the IEEE Nuclear and Plasma Sci. Soc
File Size	92349
File Format	PDF
ISBN	0780383346
ISSN	07309244
DOI	10.1109/PLASMA.2004.1340424
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-07-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma applications Plasma chemistry Chemical vapor deposition Plasma density Plasma properties Plasma temperature Thermal conductivity Thermal resistance Grain size Ultraviolet sources
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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