NDLI: Real-time control and modelling of plasma etching

Content Provider	IEEE Xplore Digital Library
Author	Sarfaty, M. Baum, C. Harper, M. Hershkowitz, N.
Copyright Year	1997
Description	Author affiliation: Eng. Res. Center for Plasma-Aided Manuf., Wisconsin Univ., Madison, WI, USA (Sarfaty, M.)
Abstract	Summary form only given. To meet the challenge of real-time advanced process control, the instantaneous process state needs to be determined. The relatively high process rates in high density plasma tools as well as the shrinking thickness of the films, require a fast estimate of the process state in order to implement process control. The research objective is to determine within a second the process rates and to implement real-time control of the films etch rate. Several in-situ, non-invasive and non-destructive sensors such as a laser interferometer and a full wafer interferometer are used to monitor the process state in a magnetically confined ICP tool. The advantages of two-color laser interferometry for real-time process monitoring and control is described. Langmuir kinetics modeling of the measured etch rates of polysilicon and SiO/sub 2/ films using Cl/sub 2/, CF/sub 4/ and CHF/sub 3/ gases over a large parameter space of antenna and wafer-stage RF power, gas flow, pressure and gas additives is described. Etch modeling enabled us to develop a real-time control algorithm. The results of real-time etch rate control of unpatterned SiO/sub 2/ and polysilicon films is described.
File Size	102497
File Format	PDF
ISBN	0780339908
ISSN	07309244
DOI	10.1109/PLASMA.1997.604358
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma applications Etching Process control Plasma density Magnetic films Laser modes Monitoring Magnetic confinement Semiconductor device modeling State estimation
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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