NDLI: Low-temperature deposition pathways to silicon nitride, amorphous silicon, polycrystalline silicon, and n type amorphous silicon films using a high density plasma system

Content Provider	IEEE Xplore Digital Library
Author	Sanghoon Bae Farber, D. Kalkan, A. Fonash, S.
Copyright Year	1997
Description	Author affiliation: Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA (Sanghoon Bae)
Abstract	Summary form only given, as follows. We report on our low temperature deposition approach to silicon nitride, amorphous silicon (a-Si) and polycrystalline silicon (poly-Si), and doped a-Si films using an Electron Cyclotron Resonance PECVD system. We find that silicon nitride films, deposited at temperatures as low as 30/spl deg/C can be obtained with /spl sim/7/spl times/10/sup -9/ A/cm/sup 2/ leakage currents, flat band voltages of /spl sim/0.6 V, and breakdown field strengths of /spl sim/6 MC/cm. In the case of the a-Si and poly-Si films, we employ X-ray diffraction, UV reflectance, photoluminescence, and electrical conductivity for evaluation. We find that a-Si films, deposited in the 30-120/spl deg/C temperature range, can be obtained with a photo-sensitivity (I/sub photo//I/sub dark/) of /spl sim/10/sup 4/ under AM1 light and that we can also produce polycrystalline films at temperatures as low as 120/spl deg/C on glass and polyethersulfone substrates. In the case of doped materials, conductivities of 10/sup -3/-10/sup -2/ S/cm can be obtained for the as-deposited layers grown at temperatures as low as 40/spl deg/C.
File Size	117163
File Format	PDF
ISBN	0780339908
ISSN	07309244
DOI	10.1109/PLASMA.1997.605152
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous materials Semiconductor films Breakdown voltage Optical films Conductivity Temperature distribution Amorphous silicon Electrons Cyclotrons Resonance
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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