NDLI: Real time characterization of plasma etch selectivity

Content Provider	IEEE Xplore Digital Library
Author	Harper, M. Sarfaty, M. Baum, C. Hershkowitz, N.
Copyright Year	1997
Description	Author affiliation: Eng. Res. Center for Plasma-Aided Manuf., Wisconsin Univ., Madison, WI, USA (Harper, M.)
Abstract	Summary form only given. In-situ real-time measurement of thin film etching and deposition is necessary for semiconductor process development as well as monitoring and control. The relatively high process rates in high density plasma tools and the shrinking thickness of the films, call for a fast estimate of the process rates. Two-color laser interferometry operated at two locations is used to determine in real-time, within a second, the etch rate and thickness of two thin transparent films. The advantages of two-color laser interferometry will be described. The selectivity of the process is calculated from the ratio of the instantaneous process rates of the films as a function of the tool state. The experiment is carried out in a magnetically confined ICP tool. The tool state, gas flow, pressure, and RF power to the antenna and the electrostatic chuck, used to bias and cool the wafer, are computer controlled and monitored. The etch selectivity of polysilicon and SiO/sub 2/ films using Cl/sub 2/, CF/sub 4/ and CHF/sub 3/ gases over a large parameter space of tool states will be described. The experimental setup is configured to utilize both single and double laser points. Both schemes are used to determine the etch rate of the two films.
File Size	102502
File Format	PDF
ISBN	0780339908
ISSN	07309244
DOI	10.1109/PLASMA.1997.604356
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma applications Etching Plasma measurements Magnetic films Plasma density Interferometry Gas lasers Magnetic confinement Semiconductor thin films Sputtering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Real time control of etch rate and selectivity using two colors laser interferometry

Characterization of chlorine discharge and etch selectivity in a magnetically confined ICP tool

Real-time control and modelling of plasma etching

FTIR measurements in an ICP etching plasma using CF/sub 4/

Several consequences of Ding's etch rate expression: ion beam etching, etch rate control and selectivity

Comparison of the electrical properties for etched and as-deposited BLT thin films

Etching of ${rm MgB}_{2}$ Thin Films for Transition Edge Superconducting Bolometer Fabrication

Enhanced sensitivity of time-resolved reflectivity measurements near Brewster's angle

Optimization of the processing parameters for pulsed laser deposition of ZnO thin films

Real time characterization of plasma etch selectivity

Similar Documents

Real time control of etch rate and selectivity using two colors laser interferometry

Characterization of chlorine discharge and etch selectivity in a magnetically confined ICP tool

Real-time control and modelling of plasma etching

FTIR measurements in an ICP etching plasma using CF/sub 4/

Several consequences of Ding's etch rate expression: ion beam etching, etch rate control and selectivity

Comparison of the electrical properties for etched and as-deposited BLT thin films

Etching of ${rm MgB}_{2}$ Thin Films for Transition Edge Superconducting Bolometer Fabrication

Enhanced sensitivity of time-resolved reflectivity measurements near Brewster's angle

Optimization of the processing parameters for pulsed laser deposition of ZnO thin films

Real time characterization of plasma etch selectivity