NDLI: Boron doping to diamond and DLC using plasma immersion ion implantation

Content Provider	IEEE Xplore Digital Library
Author	Ikegami, T. Grotjohn, T. Reinhard, D. Asmussen Jr., J.
Copyright Year	1997
Description	Author affiliation: Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA (Ikegami, T.)
Abstract	Summary form only given. Controlling carriers in diamond by doping is important to realize diamond electronic devices with advanced electrical characteristics. As a doping method the Plasma Immersion Ion Implantation (PIII) has been gathering attention due to its excellence in making shallow, highly doped regions over large areas, and its high dose rate, good dose controllability and isotropic doping properties. We have begun to investigate boron doping of diamond, silicon and diamond-like carbon films using PIII. As a doping source we use the plasma sputtering of a solid boron carbide (B/sub 4/C) target instead of toxic gas source like diborane (B/sub 2/H/sub 6/). The B/sub 4/C target of 1" diameter and a substrate (Si, diamond or diamond-like carbon film) are located in the downstream region of an ECR plasma produced by the microwave plasma disc reactor (MPDR) filled with 1-5 mTorr Ar gas. In order to sputter the target a negative self bias from -400 V to -700 V is induced by applying RF (13.56 MHz) power of 50-200 W to the target holder. For boron ion implantation, negative pulses of -1 kV to -8 kV, 1-5 /spl mu/s pulse duration, 1-200 Hz repetition rate are applied to the substrate holder using a high voltage pulser which consists of high voltage capacitors and MOSFETs.
File Size	108525
File Format	PDF
ISBN	0780339908
ISSN	07309244
DOI	10.1109/PLASMA.1997.605222
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Boron Doping Plasma immersion ion implantation Plasma properties Diamond-like carbon Semiconductor films Plasma sources Substrates Voltage Plasma devices
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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