NDLI: An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

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2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits

Reliability and technology scaling beyond the 10nm node

3D-IC FPGA: KGD, DFT and build-in FA capabilities

Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

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Cu via process optimization by electro-migration estimation testing

Cutting-edge technologies for failure analysis and their applications in industry

Application of FIB-SEM and Raman spectroscopy for investigating conductive carbon particles in epoxy encapsulation of IC

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Localized Random Telegraphic Noise Study in HfO dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps

Image improvement using image processing for scanning acoustic tomograph images

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Sample preparation DOE for the die pull test

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Improved fault localization method for power devices

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An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

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An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

Content Provider	IEEE Xplore Digital Library
Author	Jing-Neng Yao Yueh-Chin Lin Yu-Lin Chuang Yu-Xiang Huang Wang-Cheng Shih Sze, S.M. Chang, E.Y.
Copyright Year	2015
Description	Author affiliation: Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan (Jing-Neng Yao; Sze, S.M.; Chang, E.Y.) \|\| Inst. of Photonic Syst., Nat. Chiao-Tung Univ., Tainan, Taiwan (Yu-Xiang Huang; Wang-Cheng Shih) \|\| Inst. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan (Yueh-Chin Lin; Yu-Lin Chuang)
Abstract	We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.
Starting Page	419
Ending Page	422
File Size	246947
Page Count	4
File Format	PDF
ISBN	9781479999286
DOI	10.1109/IPFA.2015.7224415
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-29
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride HEMTs Gold Logic gates Stress Nickel Ohmic contacts
Content Type	Text
Resource Type	Article

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