NDLI: Debug of implant angle deviation based on SIMS analysis

Content Provider	IEEE Xplore Digital Library
Author	Jiang Bei Shi Zhen Yuan Li Xiao Gang Zheng AiMin Li Qi Hua Zhang Ming Li Wei Ting Chien Yao Bin Zhao
Copyright Year	2015
Description	Author affiliation: Failure Anal. Lab., Semicond. Manuf. Int. (Tianjin) Co., Ltd., China (Jiang Bei Shi; Zhen Yuan Li; Xiao Gang Zheng; AiMin Li; Qi Hua Zhang; Ming Li; Wei Ting Chien; Yao Bin Zhao)
Abstract	The accuracy of ion implantation is very important in semiconductor manufacturing and will directly affect the performance of the individual devices and even the whole chip. The deviation of IMP energy, dose and angle are often encountered because of the abnormality of implant equipment or process design limit. The ion implantation energy, dose and angle information can be qualitatively and quantitatively analyzed through SIMS [2], which provides a way to diagnose the issue of ion implanter. Based on SIMS analysis results, we can judge whether ion implant results meet the requirements and whether the process design achieves the expected goal. In this paper we report a SIMS data processing method for the analysis of the deviation of ion implantation angle. A term of deviation rate was defined and the related calculation method was introduced, which is proportional to the deviation angles of the ion implanter. And then, a statistical analysis of a large number of data on deviation rates and ion implantation angles showed that the whole sampling data followed normal distribution, and thus the corresponding 3 sigma could be obtained. Using the determined 3 sigma range of the deviation rates, we can define the acceptable range for deviation rate. Further, we can use the actual deviation rate to judge if the implant equipment needs maintenance or not, or suggest the direction for improvement. The equipment's maintenance time and cost can thus be minimized. This method can be used as an early detection to find an abnormity in an ion implant tool.
Starting Page	209
Ending Page	212
File Size	326253
Page Count	4
File Format	PDF
ISBN	9781479999286
DOI	10.1109/IPFA.2015.7224373
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-29
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion implantation Implants Statistical analysis Standards Fitting Smoothing methods
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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