NDLI: Phase transformation of programmed NiSi electrical fuse: Diffusion, agglomeration and thermal stability

Content Provider	IEEE Xplore Digital Library
Author	Jongwoo Park Han-Byul Kang Gun-Rae Kim Min Kim
Copyright Year	2011
Description	Author affiliation: Technology Reliability, System LSI division, Samsung Electronics, San #24 Nongseo-Dong Giheung-Gu, Yongin-City, Gyeonggi-Do, Korea 446-711 (Jongwoo Park; Han-Byul Kang; Gun-Rae Kim; Min Kim)
Abstract	An advanced CMOS technology process reliability qualification especially for the NiSi poly gated electrical fuse (eFuse) consists of electrical characterization, physical analyses and reliability evaluations. In this paper, insights are given on microstructural behaviors of the programmed NiSi poly gated eFuse induced by the high temperature storage (HTS) test. Both ex- and in-situ transmission electron microscopy (TEM) reveal that the improved post-resistance of the programmed eFuse is attributed to the low temperature growth of Ni during HTS test at 250°C. In addition, the Ni agglomeration, the propensity of Ni formation on the programmed eFuse with and without void appearance on the fuse link, is comprehensively investigated in conjunction with the eFuse reliability.
Starting Page	1
Ending Page	7
File Size	4742093
Page Count	7
File Format	PDF
ISBN	9781457701597
ISSN	19461550
e-ISBN	9781457701580
DOI	10.1109/IPFA.2011.5992800
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-04
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fuses Nickel High temperature superconductors Heating Anodes Reliability Programming phase transformation eFuse electromigration Ni agglomeration resistance TEM
Content Type	Text
Resource Type	Article

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