NDLI: Effects of side reservoirs on the electromigration lifetime of copper interconnects

Content Provider	IEEE Xplore Digital Library
Author	Mario, H. Chee Lip Gan Yeow Kheng Lim Juan Boon Tan Jun Wei Chookajorn, T. Thompson, C.V.
Copyright Year	2011
Description	Author affiliation: Nanyang Technological University, School of Materials Science & Engineering, 50 Nanyang Avenue, Singapore 639798. (Mario, H.; Chee Lip Gan) \|\| Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075. (Jun Wei) \|\| GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406. (Yeow Kheng Lim; Juan Boon Tan) \|\| Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, 02139, USA (Chookajorn, T.; Thompson, C.V.)
Abstract	A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to “trap” migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to ‘trap’ pre-existing voids is believed to be associated with local differences in back-stresses and with the differing adhesion strength of Cu atoms with the Ta/Cu and SiN-SiCN/Cu interfaces.
Starting Page	1
Ending Page	4
File Size	438865
Page Count	4
File Format	PDF
ISBN	9781457701597
ISSN	19461550
e-ISBN	9781457701580
DOI	10.1109/IPFA.2011.5992779
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-04
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Reservoirs Copper Electromigration Integrated circuit interconnections Cathodes Resistance
Content Type	Text
Resource Type	Article

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