NDLI: Optimization of Cu electrodeposition parameters for Through Silicon Via (TSV)

Content Provider	IEEE Xplore Digital Library
Author	Sang-Soo Noh Eun-Hey Choi Yong-Hyuk Lee Hyun-jin Ju Sa-Kyun Rha Boung-ju Lee Dong-Kyu Kim Youn-Seoung Lee
Copyright Year	2011
Description	Author affiliation: National Nanofab Center, Daejeon, 305-806, Korea (Boung-ju Lee) \|\| Department of Materials Engineering, Hanbat National University, Daejeon, 305-719, Korea (Hyun-jin Ju; Sa-Kyun Rha) \|\| Innectron Co. Ltd., Chungcheongbuk-do, 363-883, Korea (Dong-Kyu Kim) \|\| Department of Information & Communication Engineering, Hanbat National University, Daejeon, 305-719, Korea (Sang-Soo Noh; Eun-Hey Choi; Yong-Hyuk Lee; Youn-Seoung Lee)
Abstract	We investigated an optimal condition for void-free Cu filling in trench and TSV according to variation of plating DC current density. The copper deposit growth mode in and around the trench (width 100 µm and AR 1) was measured. The deposition rate of top layer on trench was similar to the measured Cu deposition rate on the plane wafer. However, the deposition rate in Cu electroplating was different from the top of the trench and the bottom of it according to variation of plating current density. We found that the deposition rate for all positions (top, bottom, and side-wall) was more uniform at lower plating current density. By application of this growth mode in trench, we could fill copper without void in TSVs of size from diameter 20 µm (AR 4) to 10 µm (AR 6) by Cu electroplating.
Starting Page	1
Ending Page	4
File Size	1017869
Page Count	4
File Format	PDF
ISBN	9781457701597
ISSN	19461550
e-ISBN	9781457701580
DOI	10.1109/IPFA.2011.5992776
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-04
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Current density Films Through-silicon vias Filling Silicon Three dimensional displays
Content Type	Text
Resource Type	Article

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