NDLI: Surface cleaning method for elimination of Cu-oxide layer formed on Cu film

Content Provider	IEEE Xplore Digital Library
Author	Hyun-jin Ju Yong-Hyuk Lee Sang-Soo Nho Eun-Hey Choi Sa-Kyun Rha Youn-Seoung Lee
Copyright Year	2011
Description	Author affiliation: Department of Information Communication Engineering, Hanbat National University, Daejeon 305-719, Korea (Yong-Hyuk Lee; Sang-Soo Nho; Eun-Hey Choi; Youn-Seoung Lee) \|\| Department of Materials Engineering, Hanbat National University, Daejeon 305-719, Korea (Hyun-jin Ju; Sa-Kyun Rha)
Abstract	We investigated the effects of surface cleaning to eliminate the surface native oxide on Cu film. The Cu seed layer was deposited on Ti/p-Si (100) by sputter deposition. NHOH and H solutions after TS-40A pretreatment were used to remove the Cu-oxide, and then the changed surface of Cu film was estimated by AFM, SEM, and XPS. By H treatment after TS-40A pretreatment, the Cu-oxides on surface of Cu seed film [including CuO, Cu(OH), and CuCO contaminants] were eliminated uniformly. However, by NHOH treatment after TS-40A pretreatment numerous large and small etch pits formed and the RMS roughness of Cu film surface was larger. Consequently, we found that H cleaning after TS-40A pretreatment is very effective at Cu-oxide removal.
Starting Page	1
Ending Page	5
File Size	1318340
Page Count	5
File Format	PDF
ISBN	9781457701597
ISSN	19461550
e-ISBN	9781457701580
DOI	10.1109/IPFA.2011.5992766
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-04
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Surface cleaning Films Surface morphology Surface roughness
Content Type	Text
Resource Type	Article

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