NDLI: Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well

Content Provider	IEEE Xplore Digital Library
Author	Nott, G.J. Goldys, E.M.
Copyright Year	1998
Description	Author affiliation: Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia (Nott, G.J.)
Abstract	Using the real and imaginary dielectric constants of a GaAs/AlGaAs quantum well, both the absorption and refractive index of the structure were calculated. The imaginary dielectric constant was obtained by finding the contribution from each critical point in the density of states. The Kramers-Kronig transform of each contribution gave the corresponding real dielectric constant and these contributions were summed to give the material's total real dielectric constant. Absorption was found from the imaginary dielectric constant and fitted to experimental spectra. All contributions from confined and continuum transitions were considered in the subsequent calculation of refractive index with the resulting spectrum being comparable to published data.
Starting Page	526
Ending Page	529
File Size	366132
Page Count	4
File Format	PDF
ISBN	0780345134
DOI	10.1109/COMMAD.1998.791709
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-12-14
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Absorption Refractive index Gallium arsenide Dielectric constant Excitons Effective mass Charge carrier processes Laboratories Detectors Fabry-Perot
Content Type	Text
Resource Type	Article

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