NDLI: Spectral characteristics of Si light emitting diodes in a 0.8 /spl mu/m BiCMOS technology

Content Provider	IEEE Xplore Digital Library
Author	du Plessis, M. Aharoni, H. Snyman, L.W.
Copyright Year	1998
Description	Author affiliation: Carl & Emily Fuchs Inst. for Microelectron., Pretoria Univ., South Africa (du Plessis, M.)
Abstract	It is well known that silicon diodes biased in the avalanche breakdown region of operation emit visible light. Silicon light sources in monolithic optoelectronic systems will only be used on a large scale if the devices can be easily integrated with other circuits in the standard VLSI technology. This paper investigates the spectral properties of silicon diode light sources in a 0.8 /spl mu/m BiCMOS technology. The light sources include both avalanche and field emission breakdown devices, and it Is shown that the breakdown mechanism has a significant effect on the spectral properties of the diodes. The emitted light patterns as defined by the layout also play a role, and evidence is provided that point sources have more long wavelength emission than line sources. The emission originating from bulk diodes, e.g. the buried layer, is also compared to the emission from surface-dominated junctions, and a definite shift in spectra towards longer wavelengths is observed.
Starting Page	228
Ending Page	231
File Size	560734
Page Count	4
File Format	PDF
ISBN	0780345134
DOI	10.1109/COMMAD.1998.791627
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-12-14
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Silicon Avalanche breakdown Light sources Integrated circuit technology Large scale integration Very large scale integration BiCMOS integrated circuits Mechanical factors Surface waves
Content Type	Text
Resource Type	Article

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