NDLI: Far-infrared laser generation from an optically pumped single quantum well structure

Content Provider	IEEE Xplore Digital Library
Author	Green, T.J. Xu, W.
Copyright Year	1998
Description	Author affiliation: Dept. of Mater. Eng., Wollongong Univ., NSW, Australia (Green, T.J.)
Abstract	An optically pumped far-infrared (FIR) intersubband laser generator is proposed in which the continuum states above an Al/sub 0.2/Ga/sub 0.8/As-GaAs-Al/sub 0.2/Ga/sub 0.8/As single quantum well structure with a well width of L=170 /spl Aring/ serve as the highest level in a four-level laser system. This simple structure has been designed to take advantage of the electro-phonon resonance (EPR) effect induced by electron interactions with longitudinal optical (LO) phonons in GaAs-based two-dimensional semiconductor systems (2DSSs), in achieving population inversion between the second and third electronic subbands. The design allows much greater flexibility in the choice of pumping sources and simplifies considerably the device fabrication. The electronic subband structure of the proposed FIR intersubband laser device has been obtained from a self-consistent calculation via solving coupled Schrodinger and Poisson equations.
Starting Page	131
Ending Page	134
File Size	421965
Page Count	4
File Format	PDF
ISBN	0780345134
DOI	10.1109/COMMAD.1998.791601
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-12-14
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pump lasers Optical pumping Laser excitation Finite impulse response filter Quantum well lasers Semiconductor lasers Optical design Paramagnetic resonance Charge carrier processes Electron optics
Content Type	Text
Resource Type	Article

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